Microsemi MRF951
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | MRF951 |
|---|---|
| Datasheet | MRF951 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
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● Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package
● Macro X
DESCRIPTION
: Designed for use in high gain, low noise small-signal amplifiers. DataSheet4U.com ee DataShABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .475 Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC Watts Tstg TJmax DataSheet4U.com MSC1326.PDF 10-25-99 DataSheet 4 U .com MRF951ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO ICBO IEBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 0.1 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 10 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 1.0 Vdc, VBE = 0 Vdc) 10 20 Value Typ.
