Datasheet4U Logo Datasheet4U.com

MSAFX24N50A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

📥 Download Datasheet

General Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX.

500 500 +/-20 +/-30 24 20 96 24 30 tbd 5.0 300 -55 to +150 -55 to +150 24 96 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Tj= 25°C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline GATE SOURCE Datasheet# MSC0265B MSAFX24N50A www.DataSheet4U.com Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS ∆BVDSS/∆TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS VGS = 0 V, I D = 250 µA MIN 500 TYP.

5.4

Overview

2830 S.

Fairview St.

Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX24N50A 500 Volts 24 Amps 230 mΩ N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.DataSheet4U.

Key Features

  • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified).

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
MSAFX20N60A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX10N90A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX11P50A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX40N30A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX50N20A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX75N10A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFX76N07A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MSAFA1N100D Fast MOSFET Die
MSAFA1N100P3 MOSFET Device
MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET