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  Microsemi Electronic Components Datasheet  

MSAFX50N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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MSAFX50N20A pdf
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
www.DataSheet4U.com
Features
Ultrafast body diode
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
MSAFX50N20A
200 Volts
50 Amps
45 m
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25°C
Drain-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
dv/dt
PD
Tj
Tstg
IS
ISM
θJC
200
200
+/-20
+/-30
50
40
200
50
30
tbd
5.0
300
-55 to +150
-55 to +150
50
200
0.25
DRAIN
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
V/ns
Watts
°C
°C
Amps
Amps
°C/W
GATE
SOURCE
Datasheet# MSC0258B


  Microsemi Electronic Components Datasheet  

MSAFX50N20A Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

MSAFX50N20A pdf
MSAFX50N20A
www.DataSheet4U.com
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
SYMBOL
BVDSS
BVDSS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
trr
Qrr
CONDITIONS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ± 20VDC, VDS = 0 TJ = 25°C
T J = 125°C
VDS =0.8BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, ID= 25A T J = 25°C
I D= 50A T J = 25°C
I D= 25A T J = 125°C
VDS 10 V; ID = 50 A
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 100 V,
ID = 25 A, R G = 2.00
VGS = 10 V, V DS = 100V, I D = 25A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/ µs,
IF = 10 A,
di/dt = 100 A/ µs,
25 C
125 C
25 C
125 C
MIN TYP.
200
tbd
2.0
0.09
26 32
4400
800
285
20
15
75
20
190
35
95
MAX UNIT
V
V/°C
4.0
±100
±200
200
1000
0.045
0.055
V
nA
µA
S
pF
25 ns
20
90
25
220 nC
50
110
1.5 V
200 ns
300
1.5 µC
2.6
Notes
(1) Pulse test, t 300 µs, duty cycle δ ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.


Part Number MSAFX50N20A
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Microsemi Corporation
Total Page 2 Pages
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