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PPNGZ52F120A Datasheet, Microsemi Corporation

PPNGZ52F120A transistor equivalent, n-channel insulated gate bipolar transistor.

PPNGZ52F120A Avg. rating / M : 1.0 rating-13

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PPNGZ52F120A Datasheet

Features and benefits


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* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low pack.

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PPNGZ52F120A Page 1 PPNGZ52F120A Page 2 PPNGZ52F120A Page 3

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