J211
Overview
- High gain Operating Junction Temperature ‐55°C to +135°C
- Low Leakage Maximum Power Dissipation
- Low Noise Continuous Power Dissipation 360mW J211 Applications: Derating over temperature 3.27 mW/°C
- General Purpose Amplifiers MAXIMUM CURRENT
- UHV / VHF Amplifiers Gate Current (Note 1) 10mA
- Mixers MAXIMUM VOLTAGES
- Oscillators Gate to Drain Voltage or Gate to Source Voltage ‐25V J211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐2.5 ‐‐ ‐4.5 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 7 ‐‐ 20 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current (Note 3) ‐‐ ‐‐ ‐100 pA VDS = 0V, VGS = ‐15V IG Gate Operating Current (Note 3) ‐‐ ‐10 ‐‐ pA VDS = 10V, ID = 1mA rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω IG = 1mA, VDS = 0V J211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gf
