Datasheet4U Logo Datasheet4U.com

MYXB21200-20GAB Datasheet Sic Power BJT Double

Manufacturer: Micross

Overview: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB.

Key Features

  • PBreondeufitcst Overview.
  • Two devices in one hermetic package. ar y.
  • High voltage 1200V isolation in a small package outline.
  • High current 20A.
  • High temperature 210OC Appliicnations.
  • RoHS compliant.
  • HMP solder tinned leads available.
  • Electrically isolated flange / case relim.
  • Silicon Carbide (SiC) device, gives a superior high temperature performance.
  • Fast temperature independent switching.
  • Screening.

More Datasheets from Micross

Part Number Description
MYXD30600-10CEN SiC Schottky 3 Phase Diode Bridge
MYXD30650-10CEN SiC Schottky 3 Phase Diode Bridge
MYXDB0600-10CEN SiC Schottky Diode Rectifier Bridge
MYXDB0650-10CEN SiC Schottky Diode Rectifier Bridge
MYXDS0600-03AAS Silicon Carbide Schottky Diode
MYXDS0600-03DA0 Silicon Carbide Schottky Diode
MYXDS0600-05AAS Silicon Carbide Schottky Diode
MYXFC32GJDDQ MMC Controller & NAND Flash
MYXFC64GJDDN MMC Controller and 64GB NAND Flash
MYXN25Q256A13ESF Serial NOR Flash Memory

MYXB21200-20GAB Distributor