XB1006 Datasheet Gaas Mmic Buffer Amplifier

Manufacturer: Mimix Broadband

Overview: 18.0-38.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1006 Chip Device.

Datasheet Details

Part number	XB1006
Manufacturer	Mimix Broadband
File Size	0.96 MB
Description	GaAs MMIC Buffer Amplifier
Datasheet	XB1006_MimixBroadband.pdf

General Description

Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 120 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table 5 MTTF Table 5 (5) Channel temperature affects a device's MTBF.

It is recommended to keep channel temperature as low as possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25 oC) Units GHz dB dB dB dB dB

Key Features

High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band.

XB1006 Distributor

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