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XP1021-BD Datasheet GaAs MMIC Power Amplifier

Manufacturer: Mimix Broadband

Overview: 17.0-22.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1021-BD Chip Device.

Datasheet Details

Part number XP1021-BD
Manufacturer Mimix Broadband
File Size 267.45 KB
Description GaAs MMIC Power Amplifier
Download XP1021-BD Download (PDF)

General Description

Mimix Broadband’s three stage 17.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with a +27.0 dBm saturated output power.

This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.

The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die www.DataSheet4U.com attach process.

Key Features

  • Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.