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XP1023-BD - GaAs MMIC Power Amplifier

General Description

Mimix Broadband’s three stage 24.0-34.0 GHz GaAs MMIC power amplifier has a small signal gain of 16.0 dB with a +24.0 dBm saturated output power.

Key Features

  • Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1023-BD General.

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Datasheet Details

Part number XP1023-BD
Manufacturer Mimix Broadband
File Size 300.05 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1023-BD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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24.0-34.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1023-BD Chip Device Layout Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1023-BD General Description Mimix Broadband’s three stage 24.0-34.0 GHz GaAs MMIC power amplifier has a small signal gain of 16.0 dB with a +24.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.