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GVA-84-D - Monolithic Amplifier Die

Download the GVA-84-D datasheet PDF. This datasheet also covers the GVA-84-D-Mini variant, as both devices belong to the same monolithic amplifier die family and are provided as variant models within a single manufacturer datasheet.

General Description

GVA-84-D+ (RoHS compliant) is a wideband high gain amplifier die offering high dynamic range.

It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology.

Key Features

  • High Gain, 24 dB typ. at 100 MHz.
  • High Pout, P1dB 20.5 dBm typ. at 100 MHz.
  • High IP3, 37 dBm typ. at 100 MHz.
  • Ruggedized design.
  • Fixed 5V operation.
  • Transient protected, US patent 6,943,629 Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GVA-84-D-Mini-Circuits.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GVA-84-D
Manufacturer Mini-Circuits
File Size 190.90 KB
Description Monolithic Amplifier Die
Datasheet download datasheet GVA-84-D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
5MVooltn, HoiglhitGhaiinc Amplifier Die 50Ω DC to 7 GHz GVA-84-D+ Product Features • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Transient protected, US patent 6,943,629 Typical Applications • Base station infrastructure • Portable Wireless • CATV & DBS • MMDS & Wireless LAN • LTE +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page General Description GVA-84-D+ (RoHS compliant) is a wideband high gain amplifier die offering high dynamic range. It uses patented Transient Protected Darlington configuration and is fabricated using InGaP HBT technology.