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2SC2320 - NPN Epitaxial Planar Silicon Transistor

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Part number 2SC2320
Manufacturer Mitsubishi
File Size 282.68 KB
Description NPN Epitaxial Planar Silicon Transistor
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2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VEBO VCEO Ic Pc Tj Tstg 50 6 50 200 300 125 -55~+125 V V V mA mW 1 : Emitter 2 : Collector 3 : Base 1.25 1 2 3 1.25 °C °C EIAJ : SC-43 JEDEC : TO-92 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
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