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K2973 - 2SK2973

Description

VHF/UHF power amplifiers applications.

Features

  • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm.
  • High efficiency:55% typ.
  • Source case type SOT-89 package (connected internally to source) 1.6±0.2 2 13.

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    MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1.6±0.2 2 13 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 0.53 1.5 MAX 3.0 0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE SOT-89 Dimensions in mm 1.5±0.1 0.4 +0.03 -0.05 MARKING MARKING TYPE No. K1 LOT No.
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