M54522FP Datasheet | Mitsubishi Electric

DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 → MON     OUTPUT     FEATURES High breakdown voltage (BVCEO ≥ 40V) High-current driving (Ic(max) = 400m A) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta = - 20 to +75°C) Package type 18P4G(P) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microputer output and high-current or high-voltage systems         INPUT          IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9...