Datasheet4U Logo Datasheet4U.com

M54563FP - 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

General Description

M54563FP is an eight-circuit output-sourcing Darlington transistor array.

The circuits are made of PNP and NPN transistors.

This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) =.
  • 500mA) With clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta =.
  • 20 to +75°C) Output current-sourcing type Package type 18P4G(P) NC 1 20 NC.

📥 Download Datasheet

Other Datasheets by Mitsubishi Electric

Part Number Description
M54563P 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54560P 7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
M54562P 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54564FP 8 Unit 500mA Source Type Darlington Transistor Array
M54564P 8 Unit 500mA Source Type Darlington Transistor Array
M54565P 8 UNIT 50MA TRANSISTOR ARRAY
M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M54567FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY
M54567P 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI SEMICONDUCTOR M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.