M54561P Datasheet, Array, Mitsubishi Electric Semiconductor

✔ M54561P Features

High breakdown voltage (BVCEO ≥ 40V) q High-current driving (Io(max) =
300mA) q With output clamping diodes q Active “L” input q Wide operating temperature range (Ta =

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Part number:

M54561P

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

98.82kb

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📄 Datasheet

Description:

7-unit 300ma source type darlington transistor array. M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the sem

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M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY Mitsubishi Electric Semiconductor