M54563FP Datasheet | Mitsubishi Electric

DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 VS 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 GND     OUTPUT     FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = - 500m A) With clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta = - 20 to +75°C) Output current-sourcing type Package type 18P4G(P) APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M54563P and M54563FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A clamping diode is provided between each output and GND. V S and GND are used monly among the eight circuits. The inputs have resistance of 3kΩ, and voltage of up to 10V is applicable. Output current is 500 m A maximum. Supply voltage V S is 50V maximum. The M54563FP is enclosed in a molded small flat package, enabling space-saving design.         INPUT          IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 VS 10 19 →O1  18 →O2  17 →O3  16 →O4  15 →O5  14 →O6  13 →O7  12 →O8  11 GND      OUTPUT     Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K 3K INPUT 7.2K 1.5K 3K OUTPUT GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω Aug. 1999 MITSUBISHI SEMICONDUCTOR...