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M54564FP - 8 Unit 500mA Source Type Darlington Transistor Array

Download the M54564FP datasheet PDF. This datasheet also covers the M54564P variant, as both devices belong to the same 8 unit 500ma source type darlington transistor array family and are provided as variant models within a single manufacturer datasheet.

General Description

Darlington transistor arrays.

and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Key Features

  • High breakdown voltage (BVCEO ≥ 50V) High-current driving (Io(max) =.
  • 500mA) mWith output pulldown resistance (Driving available with ofluorescent display tube) Driving available with PMOS IC output or with TTL output . cWide operating temperature range (Ta =.
  • 20 to +75°C) Output current-sourcing type t4U.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M54564P_Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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M54566FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Mitsubishi Electric
M54566P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Mitsubishi Electric
M5450 LED DISPLAY DRIVERS ST Microelectronics
M5451 LED DISPLAY DRIVERS ST Microelectronics

Other Datasheets by Mitsubishi Electric

Part Number Description
M54564P 8 Unit 500mA Source Type Darlington Transistor Array
M54560P 7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
M54562P 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
M54563FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing PIN CONFIGURATION Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.   IN1→ 1   IN2→ 2   IN3→ 3 18 →O1   17 →O2    16 →O3    IN4→ 4 15 →O4  INPUT   OUTPUT   IN5→ 5 14 →O5   FEATURES High breakdown voltage (BVCEO ≥ 50V) High-current driving (Io(max) = –500mA) mWith output pulldown resistance (Driving available with ofluorescent display tube) Driving available with PMOS IC output or with TTL output .