M54562FP Datasheet | Mitsubishi Electric

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 VS 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 GND     OUTPUT     FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = - 500m A) With output clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta = - 20 to +75°C) Output current-sourcing type Package type 18P4G(P) APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors FUNCTION The M54562P and M54562FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A spike-killer clamping diode is provided between each output and GND. V S and GND are used monly among the eight circuits. The inputs have resistance of 8.5k Ω, and voltage of up to 30V is applicable. Output current is 500m A maximum. Supply voltage V S is 50V maximum. The M54562FP is enclosed in a molded small flat package, enabling space-saving design.         INPUT          IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 VS 10 19 → O1  18 → O2  17 → O3  16 → O4  15 → O5  14 → O6  13 → O7  12 → O8  11 GND      OUTPUT     Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K 8.5K INPUT 7.2K 1.5K 3K OUTPUT GND The eight circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be...