M54567FP array equivalent, 4-unit 1.5a darlington transistor array.
High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Driving available with NMOS IC output Wide operating temperature range (T.
M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
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