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M5K4164ANP-20 Datasheet 64K-Bit DRAM

Manufacturer: Mitsubishi Electric

General Description

This is a family of 65536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the uSe of dynamic circuitry including sense amplifiers assures low power dissipation.

Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.

Overview

MITSUBISHI LSls MSK4164ANP-20 6SS36-BIT (6SS36-WORD BY I-BIT) DYNAMIC.

Key Features

  • Type name M5K4164ANP-20 Access time (maxi (nsl 200 Cycle time (mini (ns) 330 Power dissipation (typl (mWI 125.
  • Single 5V±20/ supply.
  • Low standby power dissipation: 22.0 mW (max).