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M5K4164AND-15 - 64K-Bit DRAM

This page provides the datasheet information for the M5K4164AND-15, a member of the M5K4164AND-12 64K-Bit DRAM family.

Description

This is a family of 65 536-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • Performance ranges Type name M5K4164AND-12 M5K4164AND-15 Access time (max~ (ns) 120 150 Cycle time (min) (ns) 220 260 Power dissipation (typ) (mW) 175 150.
  • Single 5V.

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Datasheet Details

Part number M5K4164AND-15
Manufacturer Mitsubishi
File Size 706.17 KB
Description 64K-Bit DRAM
Datasheet download datasheet M5K4164AND-15 Datasheet
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MITSUBISHI LSls MsK4164AND-12, -15 65 536-BIT (65 536-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysil icon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 18-pin chip carrier package configuration and an increase in system densities.
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