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MITSUBISHI-LSls
MsK4164ANL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential_ The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the 16-pin zigzag inline package configuration and an increase in system densities_ The M5K4164AN L operates on a 5V power supply using the on-chip substrate bias
M5K4164ANL-15 Datasheet
