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M5M29FB800FP-10 Datasheet 8M-Bit BLOCK ERASE FLASH MEMORY

Manufacturer: Mitsubishi Electric

Download the M5M29FB800FP-10 datasheet PDF. This datasheet also includes the M5M29FT800FP variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M29FT800FP_MitsubishiElectricSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products.

The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin TSOP(I).

Overview

MITMSIUTSBUISBHISI HLISILsSIs M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122 8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBYB8Y-B8-IBT I/T5/2542,248,288-W8-OWRODRDBYB1Y61-B6-IBT)IT) CMCOMSO3S.33V.

Key Features

  • Organization 524,288 word x 16bit 1,048,576 word x 8 bit Supply voltage VCC = 3.3V±0.3V Access time 80/100/120ns (Max) PIN.

More Datasheets from Mitsubishi Electric

Part Number Description
M5M29FB800FP-12 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800FP-80 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800FP 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800RV-10 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800RV-10 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29FB800RV-12 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800RV-12 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29FB800RV-80 8M-Bit BLOCK ERASE FLASH MEMORY
M5M29FB800RV-80 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29FB800VP 8M-Bit BLOCK ERASE FLASH MEMORY