Datasheet Details
| Part number | M5M44405CJ-5 |
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| Manufacturer | Mitsubishi Electric |
| File Size | 242.38 KB |
| Description | EDO 4M-Bit DRAM |
| Download | M5M44405CJ-5 Download (PDF) |
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| Part number | M5M44405CJ-5 |
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| Manufacturer | Mitsubishi Electric |
| File Size | 242.38 KB |
| Description | EDO 4M-Bit DRAM |
| Download | M5M44405CJ-5 Download (PDF) |
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This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.
The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.
Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
MITMSIUTSBUISBHISI LHSI ILsSIs M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY).
| Part Number | Description |
|---|---|
| M5M44405CJ-5S | EDO 4M-Bit DRAM |
| M5M44405CJ-6 | EDO 4M-Bit DRAM |
| M5M44405CJ-6S | EDO 4M-Bit DRAM |
| M5M44405CJ-7 | EDO 4M-Bit DRAM |
| M5M44405CJ-7S | EDO 4M-Bit DRAM |
| M5M44405CJ | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-5 | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-5S | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-6 | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |
| M5M44405CTP-6S | EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM |