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M5M44405CJ-7S Datasheet EDO 4M-Bit DRAM

Manufacturer: Mitsubishi Electric

Download the M5M44405CJ-7S datasheet PDF. This datasheet also includes the M5M44405CJ-5 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (M5M44405CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

General Description

This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential.

The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs.

Multiplexed address inputs permit both a reduction in pins and an increase in system densities.

Overview

MITMSIUTSBUISBHISI LHSI ILsSIs M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY).

Key Features

  • Type name RAS access time (max. ns) CAS access time (max. ns) Address a.