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M5M51016BTP-70LL - 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

Datasheet Summary

Description

The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

Features

  • Power supply current Type name M5M51016BTP,RT-70L M5M51016BTP,RT-10L M5M51016BTP,RT-70LL M5M51016BTP,RT-10LL Access time (max) Active (max) stand-by (max) 200µA (VCC = 5.5V) 70ns 100ns 30mA (1MHz) 70ns 100ns 40µA (VCC = 5.5V) 0.3µA (VCC = 3.0V, typ) Single +5.0V power supply Low stand-by current 0.3µA (typ. ) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents.

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Datasheet Details

Part number M5M51016BTP-70LL
Manufacturer Mitsubishi
File Size 79.49 KB
Description 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Datasheet download datasheet M5M51016BTP-70LL Datasheet
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Full PDF Text Transcription

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99 Jul Jul ,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L-I, M5M51016BTP,RT-70L,-10L-I, -70LL,-10LL-I -70LL,-10LL-I 1048576-BIT(65536-WORD 1048576-BIT(65536-WORDBY BY16-BIT)CMOS 16-BIT)CMOSSTATIC STATICRAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application. The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD).
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