M5M51016BTP-70LL Description
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low stand-by current and low operation current and ideal for the battery back-up application.
M5M51016BTP-70LL Key Features
- 44pin 400mil TSOP(II)
- H (400mil TSOP Normal Bend)
- J (400mil TSOP Reverse Bend)