MGFC4419S Datasheet, Mitsubishi

Low noise figure @f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers QUALITY GRADE Spa.

The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers. This product is provided by die chip form. FEATURES Low noise figure @f=12GHz NFmin. = 0.35dB (Typ.) High associat.