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MGFC4419G - InGaAs HEMT Chip

General Description

The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.

Key Features

  • (TARGET) Low noise figure NFmin,=0.5 dB (MAX. ) High associated gain Gs=12.0 dB (MIN. ) @ f=12GHz @ f=12GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip OUTLINE DRAWING DESCRIPTION The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers.