MGFC4419G Overview
The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.
| Part number | MGFC4419G |
|---|---|
| Datasheet | MGFC4419G_MitsubishiElectricSemiconductor.pdf |
| File Size | 51.71 KB |
| Manufacturer | Mitsubishi Electric |
| Description | InGaAs HEMT Chip |
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The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.
See all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGFC4419S | Low Noise GaAs HEMT |
| MGFC44V3436 | C band internally matched power GaAs FET |
| MGFC44V3642 | C band internally matched power GaAs FET |
| MGFC44V4450 | C band internally matched power GaAs FET |
| MGFC44V5964 | C band internally matched power GaAs FET |
| MGFC44V6472 | C band internally matched power GaAs FET |
| MGFC40V3742A | 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V4450A | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V5258 | C band internally matched power GaAs FET |
| MGFC40V5964A | 5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET |