MGFC4419G Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 d B (MAX.) High associated gain Gs=12.0 d B (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers. REMENDED BIAS CONDITIONS VDS=2V , ID=10m A Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature ( Ta=25°C ) < Keep safety first in your circuit designs! > Ratings -4 -4 60 50 125 -65 ~ +125 Unit V V m A m W °C °C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS (off) gm Gs NFmin Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to Source cut-off voltage Transconductance Associated gain Minimum noise figure ( Ta=25°C ) Test conditions IG= -10µA VGS=2V, VDS=0V VDS=2V, VGS=0V VDS=2V, ID=500µA VDS=2V, ID=10m A VDS=2V, ID=10m A f=12GHz Limits Min. -3 - - -0.1 - 12 - Typ. - - - - 75 13.5 - Max - 50 60 -1.5 - - 0.5 Unit V µA m A V m S d B d B MITSUBISHI ELECTRIC as of Jan.'98 (1/4) MITSUBISHI SEMICONDUCTOR <Ga As FET> PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. In Ga As HEMT Chip Typical Characteristics MITSUBISHI ELECTRIC as of Jan.'98 (2/4) MITSUBISHI SEMICONDUCTOR <Ga As FET> PRELIMINARY Notice : This is...