• Part: MGFC44V5964
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 116.99 KB
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Mitsubishi Electric
MGFC44V5964
MGFC44V5964 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION The MGFC44V5964 is an internally impedance-matched Ga As power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=24W (TYP.) @f=5.9 - 6.4GHz - High power gain GLP=9.0d B (TYP.) @f=5.9 - 6.4GHz - High power added efficiency P.A.E.=33% (TYP.) @f=5.9 - 6.4GHz - Low distortion [item -51] IM3=-42d Bc (TYP.) @Po=33.5d Bm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION - item 01 : 5.9 - 6.4 GHz band power amplifier - item 51 : 5.9 - 6.4 GHz band digital radio munication 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=6.4A - RG=25ohm Absolute...