• Part: MGFC44V4450
  • Description: C band internally matched power GaAs FET
  • Manufacturer: Mitsubishi Electric
  • Size: 148.32 KB
Download MGFC44V4450 Datasheet PDF
Mitsubishi Electric
MGFC44V4450
MGFC44V4450 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION The MGFC44V4450 is an internally impedance-matched Ga As power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE Unit : mm FEATURES Internally matched to 50(ohm) system - High output power P1d B=25W (TYP.) @f=4.4 - 5.0GHz - High power gain GLP=11.0d B (TYP.) @f=4.4 - 5.0GHz - High power added efficiency P.A.E.=34% (TYP.) @f=4.4 - 5.0GHz - Low distortion [item -51] IM3=-45d Bc (Typ.) @Po=33.5d Bm S.C.L APPLICATION - item 01 : 4.4 - 5.0GHz band microwave high power amplifier - item 51 : 4.4 - 5.0GHz band digital radio munication 4.2±0.3 QUALITY - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=6.4A - RG=25ohm Refer to Bias Procedure Absolute maximum ratings (Ta=25C) GF-38 ①gate ②source(frange) ③drain Symbol Parameter VGDO Gate to drain...