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MGFC44V4450 - C band internally matched power GaAs FET

General Description

The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4

5.0 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Internally matched to 50(ohm) system.
  • High output power P1dB=25W (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power gain GLP=11.0dB (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power added efficiency P. A. E. =34% (TYP. ) @f=4.4.
  • 5.0GHz.
  • Low distortion [item -51] IM3=-45dBc (Typ. ) @Po=33.5dBm S. C. L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE Unit : mm FEATURES Internally matched to 50(ohm) system  High output power P1dB=25W (TYP.) @f=4.4 – 5.0GHz  High power gain GLP=11.0dB (TYP.) @f=4.4 – 5.0GHz  High power added efficiency P.A.E.=34% (TYP.) @f=4.4 – 5.0GHz  Low distortion [item -51] IM3=-45dBc (Typ.) @Po=33.5dBm S.C.L APPLICATION  item 01 : 4.4 – 5.0GHz band microwave high power amplifier  item 51 : 4.4 – 5.0GHz band digital radio communication 4.2±0.3 QUALITY  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=6.