MGFC4419S Overview
The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers. This product is provided by die chip form.
| Part number | MGFC4419S |
|---|---|
| Datasheet | MGFC4419S-Mitsubishi.pdf |
| File Size | 96.99 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Low Noise GaAs HEMT |
|
|
|
The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers. This product is provided by die chip form.
See all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| MGFC4419G | InGaAs HEMT Chip |
| MGFC44V3436 | C band internally matched power GaAs FET |
| MGFC44V3642 | C band internally matched power GaAs FET |
| MGFC44V4450 | C band internally matched power GaAs FET |
| MGFC44V5964 | C band internally matched power GaAs FET |
| MGFC44V6472 | C band internally matched power GaAs FET |
| MGFC40V3742A | 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V4450A | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V5258 | C band internally matched power GaAs FET |
| MGFC40V5964A | 5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET |