MGFC4419S Datasheet PDF (Low Noise GaAs HEMT) | Download Mitsubishi MGFC4419S

MGFC4419S - Low Noise GaAs HEMT

Description

The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers.

This product is provided by die chip form.

Features

Low noise figure @f=12GHz NFmin. = 0.35dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ).

Datasheet Details

Part number	MGFC4419S
Manufacturer	Mitsubishi
File Size	96.99 KB
Description	Low Noise GaAs HEMT
Datasheet	MGFC4419S Datasheet
Additional preview pages of the MGFC4419S datasheet.

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Full PDF Text Transcription

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< Low Noise GaAs HEMT > MGFC4419S Die Chip formed product (Space grade) DESCRIPTION The MGFC4419S super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers. This product is provided by die chip form. FEATURES Low noise figure @f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION C to K band low noise amplifiers QUALITY GRADE Space grade RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA RoHS COMPLIANT MGFC4419S is a RoHS compliant product.

Published: Jun 27, 2019 |