MGFC4419S
MGFC4419S is Low Noise GaAs HEMT manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC4419S super-low noise In Ga As HEMT (High Electron Mobility Transistor) is designed for space use in C to K band amplifiers.
This product is provided by die chip form.
FEATURES
Low noise figure
@f=12GHz
NFmin. = 0.35d B (Typ.)
High associated gain
@ f=12GHz
Gs = 13.5d B (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
Space grade
REMENDED BIAS CONDITIONS
VDS=2V, ID=10m A
Ro HS PLIANT
MGFC4419S is a Ro HS pliant product.
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO
Parameter Gate to drain voltage Gate to source voltage Drain current
PT Total power dissipation
Tch Channel temperature Tstg Storage temperature
(Ta=25C )
Ratings -4 -4 60 50 125
-65 to +125
Unit V V m A m W C C
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
(Ta=25C )
Test conditions
V(BR)GDO IGSS IDSS
VGS(off) Gs
Gate to drain breakdown voltage Gate to source leakage current...
