• Part: RA30H1317M1
  • Description: Silicon RF Power Modules
  • Manufacturer: Mitsubishi Electric
  • Size: 260.83 KB
Download RA30H1317M1 Datasheet PDF
Mitsubishi Electric
RA30H1317M1
RA30H1317M1 is Silicon RF Power Modules manufactured by Mitsubishi Electric.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS pliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power bees available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate...