Part number:
RD02LUS2
Manufacturer:
Mitsubishi
File Size:
1.66 MB
Description:
Silicon rf power mos fet.
* 1.High Power Gain and High Efficiency Pout>2.0W, Gp=10dB, Drain Effi. =60%typ @ f=470MHz, VDS=3.6V, Idq=140mA, Pin=0.2W 2.Integrated gate protection diode APPLICATION For driver stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANT RD02LUS2-501, T513 is EU RoHS compliant
RD02LUS2
Mitsubishi
1.66 MB
Silicon rf power mos fet.
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