Part number:
RD100HHF1C
Manufacturer:
Mitsubishi
File Size:
466.83 KB
Description:
Silicon rf power mos fet.
RD100HHF1C Datasheet (466.83 KB)
* High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 6.2±0.7 4.5±0.7 0.1+-00..00
RD100HHF1C Datasheet (466.83 KB)
RD100HHF1C
Mitsubishi
466.83 KB
Silicon rf power mos fet.
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