RD100HHF1C fet equivalent, silicon rf power mos fet.
High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
1
2
9.6± 0.3 10.0± 0.3
3
5.0±0.3 18.5±0.3
2-R1.6 .
OUTLINE DRAWING
7.0±0.5
25.0±0.3 11.0±0.30
FEATURES
High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30M.
Image gallery
Download