RD100HHF1C Description
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30.
RD100HHF1C is Silicon RF Power MOS FET manufactured by Mitsubishi Electric.
| Manufacturer | Part Number | Description |
|---|---|---|
| RD100HHF1 | MOS FET |
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30.