RD100HHF1 Overview
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency:.
RD100HHF1 Datasheet Details
| Part number | RD100HHF1 |
|---|---|
| Datasheet | RD100HHF1_MitsubishiElectricSemiconductor.pdf |
| File Size | 239.92 KB |
| Manufacturer | Mitsubishi Electric |
| Description | MOS FET |
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