RD100HHF1 Datasheet | Mitsubishi Electric

.DataSheet.co.kr MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 - High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz - High Efficiency: 60%typ.on HF Band 10.0+/-0.3 Features 9.6+/-0.3 0.1 -0.01 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE...