Datasheet Summary
< Silicon RF Power MOS FET (Discrete) >
RoHS pliance, Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
OUTLINE DRAWING
7.0±0.5
25.0±0.3 11.0±0.30
Features
High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
17.0± 0.5
4-C2
9.6± 0.3 10.0± 0.3
5.0±0.3 18.5±0.3
2-R1.6 ± 0.15
3.3± 0.2
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
6.2±0.7 4.5±0.7
0.1+-00..0051
PIN 1. DRAIN 2. SOURCE 3. GATE UNIT:mm
RoHS PLIANT
RD100HHF1C-501 is a RoHS pliant products....
