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RD100HHF1C - Silicon RF Power MOS FET

General Description

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

Key Features

  • High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ. on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2.

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< Silicon RF Power MOS FET (Discrete) > RD100HHF1C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W DESCRIPTION RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30 FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @VDD=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 17.0± 0.5 4-C2 1 2 9.6± 0.3 10.0± 0.3 3 5.0±0.3 18.5±0.3 2-R1.6 ± 0.15 3.3± 0.2 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 6.2±0.7 4.5±0.7 0.1+-00..0051 PIN 1. DRAIN 2. SOURCE 3. GATE UNIT:mm RoHS COMPLIANT RD100HHF1C-501 is a RoHS compliant products. .