RD100HHF1C Overview
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30.
RD100HHF1C datasheet by Mitsubishi Electric.
| Part number | RD100HHF1C |
|---|---|
| Datasheet | RD100HHF1C-Mitsubishi.pdf |
| File Size | 466.83 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon RF Power MOS FET |
|
|
|
RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30.
View RD100HHF1 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| RD100HHF1 | MOS FET | Mitsubishi Electric Semiconductor |
View all Mitsubishi Electric datasheets
| Part Number | Description |
|---|