• Part: RD100HHF1C
  • Description: Silicon RF Power MOS FET
  • Manufacturer: Mitsubishi Electric
  • Size: 466.83 KB
RD100HHF1C Datasheet (PDF) Download
Mitsubishi Electric
RD100HHF1C

Description

RD100HHF1C is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 7.0±0.5 25.0±0.3 11.0±0.30.

Key Features

  • 0± 0.5 4-C2 1 2
  • 6± 0.3 10.0± 0.3 3
  • 0±0.3 18.5±0.3 2-R1.6 ± 0.15
  • 3± 0.2