RD70HHF1 Description
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency:.
RD70HHF1 is Silicon MOSFET Power Transistor manufactured by Mitsubishi Electric.
| Part Number | Description |
|---|---|
| RD70HVF1 | Silicon MOSFET Power Transistor |
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency:.