Datasheet4U Logo Datasheet4U.com

RD70HHF1 - Silicon MOSFET Power Transistor

Description

RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3

Features

  • 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD70VHF1 Nch MOS FET ETC
RD7.5E Zener diode Excel Semiconductor
RD7.5E SILICON ZENER DIODES EIC
RD7.5E Zener Diode NEC
RD7.5E 500mW PLANAR TYPE SILICON ZENER DIODES Renesas

Other Datasheets by Mitsubishi Electric

Part Number Description
RD70HVF1 Silicon MOSFET Power Transistor

Full PDF Text Transcription

Click to expand full text
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Power Transistor 30MHz,70W DESCRIPTION RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3 FEATURES 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.
Published: |