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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
DRAWING
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.
OUTLINE
4-C2
FEATURES
High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ.on VHF Band High Efficiency: 55%typ.on UHF Band
24.0+/-0.6
2
10.0+/-0.3
9.6+/-0.3
3
R1.6+/-0.15
0.1 -0.01 4.5+/-0.7 6.2+/-0.7
+0.05
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
RD70HVF1-101
is a RoHS compliant products.
RD70HVF1 Datasheet
