RD70HHF1 Overview
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency:.
RD70HHF1 datasheet by Mitsubishi Electric.
| Part number | RD70HHF1 |
|---|---|
| Datasheet | RD70HHF1_Mitsubishi.pdf |
| File Size | 242.59 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor |
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RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 4-C2 24.0+/-0.6 High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency:.
View all Mitsubishi Electric datasheets
| Part Number | Description |
|---|---|
| RD70HVF1 | Silicon MOSFET Power Transistor |