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PRE
on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som
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MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HA-50H
q IC ................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190 171 57±0.25
57±0.25
6 - M8 NUTS
20
E
E
C
C
C
C
40 124±0.25 140
G C
CM
E
E
E
C
E
G
CIRCUIT DIAGRAM
20.25 41.25 3 - M4 NUTS 79.