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MGF1451A - Low Noise MES FET

Description

The MGF1451A is designed for use in S to Ku band power amplifiers.

Features

  • High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ. ) @ f=12GHz.

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Full PDF Text Transcription

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Dec./2006 MITSUBISHI SEMICONDUTOR MGF1451A Low Noise MES FET DESCRIPTION The MGF1451A is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers QUALITY GRADE IG Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.
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