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MGF1952A - Microwave Power MES FET

Description

The MGF1952A is designed for use in S to Ku band power amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Features

  • High gain and High P1dB Glp=7.0dB , P1dB=17dBm (Typ. ) @ f=12GHz.

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Full PDF Text Transcription

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June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION The MGF1952A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB Glp=7.0dB , P1dB=17dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers Fig.1 QUALITY GRADE GG ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! www.DataSheet4U.
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