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MGF4953A - SUPER LOW NOISE InGaAs HEMT

Description

The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Features

  • Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ. ) MGF4954A : NFmin. = 0.60dB (Typ. ) High associated gain @ f=12GHz Gs = 13.5dB (Typ. ) Fig.1.

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www.DataSheet4U.com June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF4954A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs.
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