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MGF4954A Datasheet, Mitsubishi Electric

MGF4954A hemt equivalent, super low noise ingaas hemt.

MGF4954A Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 229.39KB)

MGF4954A Datasheet
MGF4954A
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 229.39KB)

MGF4954A Datasheet

Features and benefits

Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF4954A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to .

Application

Please be aware, however, that the technical information contained in these materials does not comprise consent for the.

Description

The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF495.

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TAGS

MGF4954A
SUPER
LOW
NOISE
InGaAs
HEMT
Mitsubishi Electric

Manufacturer


Mitsubishi Electric

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