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ML120G22 - a high power AlGaInP semiconductor laser

Download the ML120G22 datasheet PDF. This datasheet also covers the ML101J22 variant, as both devices belong to the same a high power algainp semiconductor laser family and are provided as variant models within a single manufacturer datasheet.

General Description

ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW.

Key Features

  • a high-power, high-efficient AlGaInP.
  • High Output Power: 180mW (Pulse).
  • High Efficiency: 0.95W/A (typ. ).
  • Visible Light: 658nm (typ. ).
  • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ. ).
  • Low Astigmatic Distance: 1 µm (typ. ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ML101J22_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MITSUBISHI LASER DIODES ML1XX22 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J22, ML120G22 FEATURES a high-power, high-efficient AlGaInP •High Output Power: 180mW (Pulse) • High Efficiency: 0.95W/A (typ.) • Visible Light: 658nm (typ.) • Low Aspect Ratio (θ⊥ / θ//): 1.8 (typ.) • Low Astigmatic Distance: 1 µm (typ.) DESCRIPTION ML1XX22 is semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 180mW. ML1XX22 has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, ML1XX22 has a window-mirror-facet which improves the maximum output power.