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ML792E32 Datasheet (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

Manufacturer: Mitsubishi Electric

General Description

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm.

λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation.

Furthermore, ML7xx32 is able to operate in the wide temperature range from 0 oC to 85 oC without temperature control.

Overview

MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10Gbps Ethernet/Short.

Key Features

  • λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www. DataSheet4U. com.