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ML792H32 - (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

Download the ML792H32 datasheet PDF. This datasheet also covers the ML792E32 variant, as both devices belong to the same (ml7xx32) 10gbps ingaasp dfb laser diode family and are provided as variant models within a single manufacturer datasheet.

General Description

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm.

λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation.

Key Features

  • λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ML792E32_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Mitsubishi Electric

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10Gbps Ethernet/Short Reach DESCRIPTION ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 is able to operate in the wide temperature range from 0 oC to 85 oC without temperature control.