ML792H32, ML792E32 Datasheet - Mitsubishi Electric

ML792H32 (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 is able to operate in the wide temperature ra.

ML792H32 Features

* λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser

ML792E32_MitsubishiElectric.pdf

ML792H32 Datasheet Preview — This datasheet PDF includes multiple part numbers: ML792H32, ML792E32. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ML792H32, ML792E32

Manufacturer:

Mitsubishi Electric

File Size:

97.58 KB

Description:

(ml7xx32) 10gbps ingaasp dfb laser diode.

Note:

This datasheet PDF includes multiple part numbers: ML792H32, ML792E32.
Please refer to the document for exact specifications by model.

ML792H32 Distributor

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ML792H32 ML792E32 ML7xx32 10Gbps InGaAsP DFB LASER DIODE Mitsubishi Electric