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ML792E32 - (ML7xx32) 10Gbps InGaAsP DFB LASER DIODE

General Description

ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm.

λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation.

Key Features

  • λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www. DataSheet4U. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10Gbps Ethernet/Short Reach DESCRIPTION ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 is able to operate in the wide temperature range from 0 oC to 85 oC without temperature control.