RA07N3340M datasheet, compliance equivalent, Mitsubishi Electric

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RA07N3340M Features and benefits

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V)
* Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20.

RA07N3340M Description

The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V.

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