* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V)
* Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
* ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW
* Broadband Frequency Range: 330-400MHz www.DataSheet4U.com
* Low-Power Control Current IGG=1mA (ty
RA07N3340M Datasheet (152.07 KB)
RA07N3340M
Mitsubishi Electric
152.07 KB
Rohs compliance.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M BLOCK DIAGRAM 2 3 RoHS Compliance , 330-400MHz 7..
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